AMD-IBM developed strained silicon transistor

AMD, IBM Announce Semiconductor Manufacturing Technology Breakthrough

SUNNYVALE, CA and EAST FISHKILL, NY — December 13, 2004 –AMD and IBM today announced that they have developed a new and unique strained silicon transistor technology aimed at improving processor performance and power efficiency. The breakthrough process results in up to a 24 percent transistor speed increase, at the same power levels, compared to similar transistors produced without the technology.

Faster, more power-efficient transistors are the building blocks of higher performance, lower power processors. As transistors get smaller, they operate faster, but also risk operating at higher power and heat levels due to electrical leakage or inefficient switching. AMD and IBM’s jointly developed strained silicon helps overcome these challenges. In addition, this process makes AMD and IBM the first companies to introduce strained silicon that works with silicon-on-insulator (SOI) technology, resulting in an additive performance and power savings benefit.

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