AMD and IBM Detail Early Results Using Immersion and Ultra Low-K in 45NM Chips

AMD and IBM Detail Early Results Using Immersion and Ultra Low-K in 45NM Chips

At the International Electron Device Meeting (IEDM) today, IBM (NYSE: IBM) and AMD (NYSE: AMD) presented papers describing the use of immersion lithography, ultra-low-K interconnect dielectrics, and multiple enhanced transistor strain techniques for application to the 45nm microprocessor process generation. AMD and IBM expect the first 45nm products using immersion lithography and ultra-low-K interconnect dielectrics to be available in mid-2008.

“As the first microprocessor manufacturers to announce the use of immersion lithography and ultra-low-K interconnect dielectrics for the 45nm technology generation, AMD and IBM continue to blaze a trail of innovation in microprocessor process technology,” said Nick Kepler, vice president of logic technology development at AMD. “Immersion lithography will allow us to deliver enhanced microprocessor design definition and manufacturing consistency, further increasing our ability to deliver industry-leading, highly sophisticated products to our customers. Ultra-low-K interconnect dielectrics will further extend our industry-leading microprocessor performance-per-watt ratio for the benefit of all of our customers. This announcement is another proof of IBM and AMD’s successful research and development collaboration.”

Current process technology uses conventional lithography, which has significant limitations in defining microprocessor designs beyond the 65nm process technology generation. Immersion lithography uses a transparent liquid to fill the space between the projection lens of the step-and-repeat lithography system and the wafer that contains hundreds of microprocessors. This significant advance in lithography provides increased depth of focus and improved image fidelity that can improve chip-level performance and manufacturing efficiency. This immersion technique will give AMD and IBM manufacturing advantages over competitors that are not able to develop a production-class immersion lithography process for the introduction of 45nm microprocessors. For example, the performance of an SRAM cell shows improvements of approximately 15 per cent due to this enhanced process capability, without resorting to more costly double-exposure techniques.

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