IBM Unveils World’s Fastest On-Chip Dynamic Memory Technology

IBM Unveils World’s Fastest On-Chip Dynamic Memory Technology

In papers presented at the International Solid State Circuits Conference (ISSCC) today, IBM revealed a first-of-its-kind, on-chip memory technology that features the fastest access times ever recorded in eDRAM (embedded dynamic random access memory).

This new technology, designed using IBM’s Silicon-on-Insulator (SOI) for high-performance at low power, vastly improves microprocessor performance in multi-core designs and speeds the movement of graphics in gaming, networking, and other image intensive, multi-media applications. The technology is expected to be a key feature of IBM’s 45nm (nanometer) microprocessor roadmap and will become available beginning in 2008.

IBM’s new eDRAM technology, designed in stress-enabled 65nm SOI using deep trench, dramatically improves on-processor memory performance in about one-third the space with one-fifth the standby power of conventional SRAM (static random access memory).

Read the complete Press Release