– Achieved a Record-High Hole Mobility by Forming an Ultra-Thin Strontium Germanide (SrGex) Interlayer —
Toshiba Corporation (TOKYO:6052) today announced a significant advance in the development of a gate stack and interlayer with high carrier mobility that can be applied to advanced metal-insulator-semiconductor field-effect transistors (MISFETs) in future generations of LSIs.
The ultra-thin, Equivalent Oxide [...]

–New Technique for Next-Generation 45nm CMOS Technology Boosts Gate Density to 2.6 Times Higher Than That of 65nm CMOS Technology–
VLSI Technology 2008
Toshiba Corporation (TOKYO:6502) today announced that it has developed a new compact model for circuit design that achieves higher gate density and improved cost-performance in next-generation 45nm CMOS technology. By applying this technique, [...]

VLSI Symposia 2008
Toshiba Corporation (TOKYO:6502) today announced that, together with IBM Corporation, it has developed a higher performance CMOS FET, a high priority for advanced system LSI. The new technology matches the highest possible performance, and opens the way for further advances in process technology. Toshiba and IBM announced the achievement on June 19, at [...]

Hyderabad, India, January 07, 2008: The 21st International VLSI Conference and the 7th International Embedded systems Conference from January 4 – 8 opened on Friday. The Conference is expected to draw more than 1000 VLSI and Embedded Systems Experts, Researchers, Scientists, Academicians, 2000 student delegates, exhibits from worlds leading product companies, a who’s who of [...]

-Announces 2000 Student Delegate Participation
Hyderabad, India, December 25, 2007: For the first time the organizers of International VLSI Conference have announced an international Student Conference providing an opportunity for 2000 Student delegates to participate and to interact with leading VLSI and Embedded Systems Architects, Technology experts and, to take part in a series [...]