– Achieved a Record-High Hole Mobility by Forming an Ultra-Thin Strontium Germanide (SrGex) Interlayer —
Toshiba Corporation (TOKYO:6052) today announced a significant advance in the development of a gate stack and interlayer with high carrier mobility that can be applied to advanced metal-insulator-semiconductor field-effect transistors (MISFETs) in future generations of LSIs.
The ultra-thin, Equivalent Oxide [...]

VLSI Symposia 2008
Toshiba Corporation (TOKYO:6502) today announced that, together with IBM Corporation, it has developed a higher performance CMOS FET, a high priority for advanced system LSI. The new technology matches the highest possible performance, and opens the way for further advances in process technology. Toshiba and IBM announced the achievement on June 19, at [...]